DETAILED NOTES ON GERMANIUM

Detailed Notes on Germanium

s is that of the substrate content. The lattice mismatch brings about a big buildup of pressure Power in Ge layers epitaxially developed on Si. This strain energy is principally relieved by two mechanisms: (i) technology of lattice dislocations within the interface (misfit dislocations) and (ii) elastic deformation of both the substrate and the Ge

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